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A-B 80190-220-01-R Mitsubishi IGCT Module

A-B 80190-220-01-R Mitsubishi IGCT Module

A-B 80190-220-01-R Mitsubishi  IGCT Module IGCT integrated gate commutator thyristor module The outstanding feature of the IGCT-leading to its name and its main advantages-is not only the silicon wafer itself, but the way it is driven by the gate-the electrical and mechanical gate-drive design. The 80190-220-01-R «hard-drive» concept at the heart of IGCT operation requires the mechanical integration of gate driver and semiconductor into one single unit with low circuit inductance.




Part No:

Product Name:Silicon controlled,IGCT Module


IGCT integrated gate commutator thyristor module 80190-220-01-R  PLC IO Module Test Based On LabVIEW,.


ACS 6000 IGCT technology for maximal loadability in combination with minimal part count.Active Rectifier Unit (ARU)Self-commutated, 6-pulse,3-level voltage source inverterwith lGCT technology.


High snubberless turn-off rating

Optimized for medium frequency (<l kHz) andwide temperature range

High reliability  80190-220-01-R

High electromagnetic immunity

Simple control interface with status feedbackAC or DC supply voltage

Contact factory for series connection

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