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A-B 80026-529-01-R Commutated Thyristor IGCT

A-B 80026-529-01-R Commutated Thyristor IGCT

A-B 80026-529-01-R Commutated Thyristor IGCT High quality performance completes the system task The Integrated Gate Commutated Thyristor (IGCT) has become the power semiconductor of choice in medium voltage industrial applications The 80026-529-01-R IGCT is a semiconductor switch with low on-state loss, making it ideal for medium to the highest power inverters; an application that must strive to maximize power output and energy efficiency to deliver a competitive product




Part No:

Product Name:Silicon controlled,IGCT Module


IGCT integrated gate commutator thyristor module 80026-529-01-R  PLC IO Module Test Based On LabVIEW,.


ACS 6000 IGCT technology for maximal loadability in combination with minimal part count.Active Rectifier Unit (ARU)Self-commutated, 6-pulse,3-level voltage source inverterwith lGCT technology.


High snubberless turn-off rating

Optimized for medium frequency (<l kHz) andwide temperature range

High reliability  80026-529-01-R

High electromagnetic immunity

Simple control interface with status feedbackAC or DC supply voltage

Contact factory for series connection

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